報告書番号

686006

タイトル（和文）

交流ＵＨＶ級複数連がいしの汚損耐電圧特性

タイトル（英文）

AC FOG WITHSTAND VOLTAGE CHARACTERISTICS OF CONTAMINATED PARALLEL INSULATORS FOR UHV LINES.

概要 （図表や脚注は「報告書全文」に掲載しております）

交流ＵＨＶ級複数連がいしの汚損耐電圧特性複数がいしの交流汚損耐電圧特性を定印霧中法より求めた。主要な結果は以下の通りである。（１）定印霧中試験では，通常の４連並行配列がいしの霧中フラッシオーバ電圧は単連に比べて約５％低い値となった。（２）等価霧中法による低下率１０％に比べ低下率が半減した。（３）段違い配列の霧中耐電圧は，通常平行配列のそれより上昇したが，等価霧中法で得られた程の効果は得られなかった。

概要 （英文）

AC WITHSTAND VOLTAGE CHARACTERISTICS OF ARTIFICIALLY CONTAMINATED PARALLEL INSULATORS STRINGS WERE INVESTIGATED BY FOG WITHSTAND METHOD. THE MAIN RESULTS ARE SUMMARIZED AS FOLLOWS: (1)BYTHE FOG WITHSTAND METHOD, CONTAMINATION WITHSTAND VOLTAGE OF FOUR PARALLEL INSULATOR STRINGS WAS 5% LOWER THAN THAT OF A SINGLE. INSULATOR STRING. (2)THE CONTAMINATION WITHSTAND VOLTAGE DROP RATIO OF FOUR PARALLEL INSULATOR STRINGS BY FOG WITHSTAND METHOD WAS HALF OF THAT BY EQUIVALENT FOG METHOD. (3)THE CONTAMINATION WITHSTAND VOLTAGE OF INSULATOR STRINGS WHOSE INSULATORS IN ONE STRING WERE DISPOSED ON THE DIFFERENT LEVEL IN HEIGHT-BY HALF OF AN INSULATOR S HEIGHT-FROM INSULATORS IN NEXT STRING WAS HIGHER THAN THAT OF NORMALLY DISPOSED INSULATOR STRINGS BY FOGWITHSTAND METHOD. BUT THIS EFFECT BY FOG WITHSTAND METHOD ISN T SO OBVIOUS AS THAT BY EQUIVALENT FOG METHOD.

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